A company focused on the research and development of third-generation semiconductor silicon carbide substrate materials has made breakthroughs in large-size substrate preparation technology, but faces problems such as scattered patent layouts and a disconnect between academic achievements and industry demand. The company successfully prepared an 8-inch high-quality silicon carbide substrate with a crystal defect density reduced to below 0.5 cm ². However, the R&D team focused on optimizing the production process and only applied for 2 utility model patents, without forming a system patent protection; Simultaneously published papers often focus on the accumulation of experimental data, without highlighting the core innovation points and failing to support the discourse power of enterprises in industry standard setting.

We conducted a two-week technical exploration in the production line and R&D laboratory of the enterprise. Through in-depth interviews with material engineers and process experts, we identified 16 technological innovation points, including crystal growth rate control, impurity concentration regulation, and slice flatness optimization. In response to the problem of scattered patent layout, a three-layer patent layout strategy of "core technology+peripheral technology+application solution" has been formulated to assist enterprises in completing 23 patent applications, including 17 invention patents, forming a full chain protection from raw material purification to device application, especially the patent of "a growth method for reducing micro tube defects in silicon carbide crystals", which has solved common problems in the industry.

In terms of improving academic papers, the R&D team was guided to extract three research directions with academic value from patented technologies, and wrote four academic papers on topics such as "crystal defect formation mechanism" and "growth parameter optimization model". Two of these papers were included in the "Applied Physics Letters" and cited authorized patents from enterprises as technical support, enhancing the authority of the research. At the same time, we assisted enterprises in incorporating three core patented technologies into industry standard development proposals. With the dual support of patents and papers, we successfully promoted two technical indicators to become industry recommended standards.

After one year of project implementation, the number of enterprise patents increased tenfold, forming an effective technical barrier and successfully preventing low-priced competition among peers. The product market share increased from 12% to 28%. Academic papers have been cited 120 times, and companies have been invited to participate in the development of three national semiconductor material standards. The technology premium ability has significantly improved, and the unit price of 8-inch substrate products has increased by 30%. The annual sales revenue has exceeded 80 million yuan, making it a benchmark for industry technological innovation.